VPL, BSS Vishay Siliconix. Document Number: S—Rev. E , Jun P-Channel V (D-S) MOSFETs. DATA SHEET. Product specification. Supersedes data of April File under Discrete Semiconductors, SC13b. Jun DISCRETE. BSS92 datasheet, BSS92 circuit, BSS92 data sheet: SIEMENS – SIPMOS Small- Signal Transistor (P channel Enhancement mode Logic Level),alldatasheet.
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Philips Semiconductors, 6F, No. Hotel Minsk Business Center, Bld. P-channel enhancement mode vertical D-MOS transistor.
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Vishay – BSS92 – Enhancement-Mode MOSFET Transistors
Stress above one or more of the limiting values may cause permanent damage to the device. Philips Semiconductors Philippines Inc. AllmendstrasseCH Z? Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. This data sheet contains preliminary data; supplementary data may be published later. Exposure to limiting values for extended periods may affect device reliability. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci?
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The new type of capacitor has a space-saving design with two, three or even ten identical capacitors connected in parallel on the same terminal to increase the capacitance. Want to gain comprehensive data for BSS92 to optimize the supply chain include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecastsplease contact to our Datxsheet team. Register Log in Shopping cart 0 You have no items in your shopping cart.